digital transistors (built-in resistors) dtc144tm/dtc144te/dtc144tua dtc144tka /DTC144TCA/dtc144tsa equivalent circuit digital transistor (npn) features ? built-in bias resistors enable the co nfiguration of an inverter circuit without connecting external input re sistors(see equivalent circuit) ? the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.they also have the advantage of almost completely eliminating parasitic effects ? only the on/off conditions need to be se t for operation, making device design easy pin connenctions and marking dtc144tm sot-723 1. in 2. gnd 3. out marking:06 dtc144te sot-523 1. in 2. gnd 3. out marking: 06 dtc144tua sot-323 1. in 2. gnd 3. out marking: 06 dtc144tka sot-23-3l 1. in 2. gnd 3. out marking: 06 DTC144TCA sot-23 1. in 2. gnd 3. out marking: 06 dtc144tsa to-92s 1. gnd 2. out 3. in 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c , jun ,2013
maximum ratings(ta= 25 unless otherwise noted) limits(dtc144t ) symbol parameter m e ua ka ca sa unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 100 ma p d power dissipation 100 150 200 200 200 300 mw t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (ta= 25 unless otherwise specified) parameter symbol conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=50a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo ic=1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50a,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 0.5 a emitter cut-off current i ebo v eb =4v,i c =0 0.5 a collector-emitter saturation voltage v ce(sat) i c =5ma,i b =0.5ma 0.3 v dc current gain h fe v ce =5v,i c =1ma 100 300 600 input resistor r 1 32.9 47 61.1 k ? transition frequency f t v ce =10v,i e =-5ma, f=100mhz 250 mhz 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c , jun ,2013
0.1 1 10 100 10 100 1000 0.1 1 10 100 10 100 1000 0 1 02 03 04 0 0.1 1 10 0.1 1 10 100 0.1 1 10 100 02468 0 1 2 3 4 5 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 3000 dtc144txx i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 5v f=1mhz i e =0 t a =25 v cb c ob ?? c ob reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (v) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =5v ambient temperature t a ( ) power dissipation p d (mw) p d ?? t a static characteristic common emitter t a =25 10ua 9ua 8ua 7ua 6ua 5ua 4ua 3ua 2ua i b =1ua collector current i c (ma) collector-emitter voltage v ce (v) dtc144tm dtc144te DTC144TCA/tua/tka dtc144tsa 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c , jun ,2013
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